CN107 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CN 107
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Total Power Dissipation Ta=25deg C
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
Tj, Tstg
VALUE
60
50
6.0
100
200
300
-55 to +150
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
83.3
Junction to Ambient
Rth(j-a)
200
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector -Emitter Voltage
VCEO IC=1mA,IB=0
50
Collector -Base Voltage
VCBO IC=100uA,IE=0
60
Emitter Base Voltage
VEBO
IE=10uA.IC=0
6.0
Collector Cut off Current
ICBO
VCB=30V, IE=0
-
DC Current Gain
hFE
IC=10uA,VCE=5V
-
IC=2mA,VCE=5V
125
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=1mA
-
IC=100mA,IB=5mA
-
Base Emitter Saturation Voltage
VBE(Sat) IC=100mA,IB=5mA
-
Base Emitter on Voltage
VBE(on) IC=10mA,VCE=5V
-
TYP
-
90
-
0.10
-
0.90
-
Dynamic Characteristics
Transition Frequency
Output Capacitance
Input Capacitance
ft
VCE=5V,IC=10mA,
-
350
f=100MHz
Ccbo
VCB=10V, IE=0
-
-
f=1MHz
Cibo
VEB=0.5V, IC=0
-
10
f=1MHz
UNIT
V
V
V
mA
mA
mW
deg C
deg C/W
deg C/W
MAX
15
-
500
-
0.60
-
0.77
UNIT
V
V
V
nA
V
V
V
V
-
MHz
4.5
pF
-
pF
Continental Device India Limited
Data Sheet
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