CN1016 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR
CN1016
(9AW)
TO-3P
MARKING:- CN
1016
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
160
Collector -Emitter Voltage
VCEO
150
Emitter Base Voltage
VEBO
5.0
Collector Current
IC
10
Peak t=30ms
ICP
15
Base Current
IB
1.0
Collector Power Dissipation @ Tc=25 deg C PC
60
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Cut off Current
ICBO
VCB=160V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
-
Collector Emitter Voltage
VCEO
IC=30mA, IB=0
150
-
DC Current Gain
hFE
IC=6A, VCE=4V
2.0
-
IC=10A, VCE=4V
1.0
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=6A, IB=6mA
-
-
Base Emitter Saturation Voltage
VBE(Sat) IC=6A, IB=6mA
-
-
Dynamic Characteristics
Transition Frequency
ft
VCE=12V, IC=1A,
-
80
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
85
f=1MHz
MAX
100
3.0
-
20
-
2.5
3.0
-
-
UNIT
V
V
V
A
A
A
W
deg C
deg C
UNIT
uA
mA
V
K
K
V
V
MHz
pF
Continental Device India Limited
Data Sheet
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