CMMT591A Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR ₃
1
CMMT591A
SOT-23
MARKING: 59A
2
Complementary CMMT491A
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Peak Pulse Current
ICM
Collector Current Continuous
IC
Base Current
IB
Power Dissipation @Tamb=25 deg C
Ptot
Operating & Storage Temperature Range Tj, Tstg
ELECTRICAL CHARACTERISTICS (Ta=25 deg C )
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Cut off Current
ICBO
Emitter Cut off Current
IEBO
Collector-Emitter Cut off Current
ICES
Collector Emitter Saturation Voltage
VCE(Sat)*
Base Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
VBE(Sat)*
VBE(on)*
hFE
Dynamic Characteristics
Transition Frequency
ft
VALUE
40
40
5.0
2.0
1.0
200
500
-55 to +150
TEST CONDITION
MIN
IC=100uA, IE=0
40
IC=10mA, IB=0
40
IE=100uA, IC=0
5.0
VCB=30V, IE=0
-
VEB=4V, IC=0
-
VCE=30V, VBE=0
-
IC=100mA,IB=1mA
-
IC=500mA,IB=20mA
-
IC=1A, IB=100mA
-
IC=1A, IB=50mA
-
IC=1A, VCE=5V
-
IC=1mA,VCE=5V
300
IC=100mA,VCE=5V* 300
IC=500mA,VCE=5V* 250
IC=1A, VCE=5V*
160
IC=2A, VCE=5V*
30
VCE=10V,IC=50mA, 150
f=100MHz
MAX
-
-
-
100
100
100
0.20
0.35
0.50
1.1
1.0
-
800
-
-
-
-
Output Capacitance
Cobo
VCB=10V, IE=0
f=1MHz
*Pulsed Conditions pulse width=300us, Duty Cycle=2%
-
10
UNIT
V
V
V
A
A
mA
mW
deg C
UNIT
V
V
V
nA
nA
nA
V
V
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3