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CMMT493 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
CMMT493
SOT-23
Formed SMD Package
1
2
Marking Code is =493
Medium Power Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Power Dissipation @ Ta=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj, Tstg
VALUE
120
100
5
1
2
200
500
- 55 to +150
Electrical Characterstics (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
MIN
Collector Base Voltage
Collector Emitter Voltage
VCBO
*VCEO(sus)
IC=100µA, IE=0
120
IC=10mA, IB=0
100
Emitter Base Voltage
VEBO
IE=100µA, IC=0
5
Collector Cut Off Current
ICBO
VCB=100V, IE=0
Collector Cut Off Current
ICES
VCE=100V, VBE=0
Emitter Cut Off Current
Collector Emitter Saturation
Voltage
IEBO
VCE(sat)
VEB=4V, IC=0
IC=500mA, IB=50mA
IC=1A, IB=100mA
Base Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=100mA
Base Emitter On Voltage
DC Current Gain
Transition Frequency
Output Capacitance
VBE(on)
*hFE
fT
Cobo
VCE =10V, IC=1A
VCE =10V, IC=1mA
100
VCE =10V, IC=250mA
100
VCE =10V, IC=500mA
60
VCE =10V, IC=1A
20
VCE=10V, IC=50mA, f=100MHz 150
VCB=10V, f=1MHz
*Pulse Test: Pulse Width =300 µs, Duty Cycle <2%
UNITS
V
V
V
A
A
mA
mW
ºC
TYP
MAX
100
100
100
0.30
0.60
1.15
1.00
UNIT
V
V
V
nA
nA
nA
V
V
V
V
300
MHz
10
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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