CML1207 Datasheet, PDF (1/6 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CML1207
TO-92L
Plastic Package
Power Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation @ T_a=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
VALUE
50
50
5.0
1.0
1.0
1.0
150
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB=50V, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
V_CEO
V_EBO
h_FE
I_C=1mA, I_B=0
I_E=1mA, I_C=0
*I_C=0.5A, V_CE=2V
I_C=1A, V_CE=2V
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=500mA, I_B=50mA
I_C=1A, I_B=100mA
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=1A, I_B=100mA
Transition Frequency
f_T
I_C=100mA, V_CE=2V
Output Capacitance
C_ob
I_E=0, V_CB=10V, f=1MHz
MIN TYP
50
5.0
60
20
100
4.0
MAX
0.1
0.1
240
0.4
0.6
1.2
Switching Time
DESCRIPTION
Turn On Time
Turn Off Time
SYMBOL
t_on
t_off
TEST CONDITION
V_CC=30V, I_B1= -I_B2=50mA,
Duty Cycle < 1%
MIN TYP
0.1
1.1
MAX
*h_FE Classification
CML1207Rev020106E
O 60 - 140, Y 120 - 240
UNITS
V
V
V
A
A
W
ºC
ºC
UNITS
µA
µA
V
V
V
V
V
MHz
pF
UNITS
µs
µs
Continental Device India Limited
Data Sheet
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