CMBTH10 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
CMBTH10
SOT-23
Formed SMD Package
1
2
Marking Code = 3E
VHF/UHF Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
SYMBOL
V_CEO
V_CBO
V_EBO
VALUE
25
30
3.0
THERMAL CHARACTERISTICS
*Device Dissipation FR-5 Board, T_a=25ºC
P_D
225
Derate above=25ºC
1.8
Thermal Resistance Junction to Ambient in free Air ^Rth (j-a)
556
**Device Dissipation Alumina Substrate, T_a=25ºC
P_D
300
Derate above=25ºC
2.4
Thermal Resistance Junction to Ambient in free Air ^Rth (j-a)
417
Junction and Storage Temperature
T_j, T_stg
150
* FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches)
** Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches) 99.5% alumina.
Electrical Characterstics (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL CONDITIONS MIN
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
25
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0 30
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
3
Collector Cut Off Current
I_CBO
V_CB=25V, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=2V, I_C=0
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
h_FE
V_CE =10V, I_C=4mA 60
V_CE(sat) I_C=4mA, I_B=0.4mA
V_BE(on) V_CE =10V, I_C=4mA
MAX
100
100
0.50
0.95
UNITS
V
V
V
mW
mW/ºC
ºC/mW
mW
mW/ºC
ºC/mW
ºC
UNIT
V
V
V
nA
nA
V
V
Continental Device India Limited
Data Sheet
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