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| CMBTA44 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |||
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
CMBTA44
SOT-23
Formed SMD Package
1
2
Marking Code is =3Z
Designed for Extremely High Voltage Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current
IC
Collector Power Dissipation
PD
Operating And Storage Junction
Temperature Range
Tj, Tstg
THERMAL RESISTANCE
Junction to Ambient in free air
Rth(j-a)
VALUE
450
400
6
300
350
- 65 to+150
357
Electrical Characterstics (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
SYMBOL
ICBO
ICES
IEBO
VCBO
VCES
VCEO
VEBO
CONDITIONS
MIN
VCB=400V, IE=0
VCE=400V, VBE=0
VEB=4V, IC=0
IC=100µA, IE=0
450
IC=100µA, VBE=0
450
IC=1mA, IB=0
400
IE=10µA, IC=0
6
Collector Emitter Saturation
Voltage
VCE(sat)
Base Emitter Saturation Voltage
VBE(sat)
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
DC Current Gain
Transition Frequency
Output Capacitance
Input Capacitance
Continental Device India Limited
hFE
VCE =10V, IC=1mA
40
VCE =10V, IC=10mA
50
VCE =10V, IC=50mA
45
VCE =10V, IC=100mA
20
fT
VCE=10V, IC=10mA, f=10MHz
20
Cob
VCB=20V, IE =0, f=1MHz
Cib
VEB =0.5V, Ic=0, f=1MHz
Data Sheet
UNITS
V
V
V
mA
mW
ºC
ºC/W
TYP
MAX
100
500
100
0.40
0.50
0.75
0.75
UNIT
nA
nA
nA
V
V
V
V
V
V
V
V
200
MHz
7.0
pF
130
pF
Page 1 of 3
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