CMBT9012 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON PLANAR TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR ₃
1
CMBT 9012
SOT-23
MARKING: AS BELOW
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
35
30
5.0
500
250
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Base Voltage
VCBO IC=100uA, IE=0
35
Collector -Emitter Voltage
VCEO IC=1mA, IB=0
30
Emitter Base Voltage
VEBO IE=100uA, IC=0
5.0
Collector Cut off Current
ICBO VCB=25V, IE=0
-
Emitter Cut off Current
IEBO VEB=3V, IC=0
-
DC Current Gain
hFE
IC=50mA,VCE=1V *
118
IC=300mA,VCE=1V
40
Collector Emitter Saturation Voltage
VCE(Sat) IC=150mA,IB=15mA
-
IC=300mA,IB=30mA
-
Base Emitter Saturation Voltage
VBE(Sat) IC=150mA,IB=15mA
-
IC=300mA,IB=30mA
-
Dynamic Characteristics
Transition Frequency
ft
VCE=10V,IC=50mA,
140
f=100MHz
TYP MAX
-
-
-
-
-
-
-
100
-
500
-
305
-
-
-
0.20
-
0.60
-
1.0
-
1.20
-
-
CLASSIFICATION
hFE*
MARKING
G/H/I
118-305
2GI
UNIT
V
V
V
mA
mW
deg C
UNIT
V
V
V
nA
nA
V
V
V
V
MHz
Continental Device India Limited
Data Sheet
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