CMBT857 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR ₃
1
CMBT857
SOT23
MARKING: AS BELOW
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
60
Collector -Emitter Voltage
VCEO
50
Emitter Base Voltage
VEBO
6.0
Collector Current
IC
200
Collector Power Dissipation
PC
200
Junction Temperature
Tj
125
Storage Temperature
Tstg
-55 to +125
ELECTRICAL CHARACTERISTICS (Ta=25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
Collector -Emitter Voltage
VCEO IC=100uA, IB=0
50
-
Collector Cut off Current
ICBO VCB=60V, IE=0
-
-
Emitter Cut off Current
IEBO VEB=6V, IC=0
-
-
DC Current Gain
hFE(1) IC=1mA,VCE=6V
150
-
hFE(2) IC=0.1mA,VCE=6V
90
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=100mA,IB=10mA
-
-
Base Emitter Saturation Voltage
VBE(Sat) IC=100mA,IB=10mA
-
-
Dynamic Characteristics
Transition Frequency
ft
VCE=6V,IC=10mA,
-
200
Collector Output Capacitance
Cob
VCB=6V, IE=0
-
4.0
f=1MHz
Noise Figure
NF
VCE=6V, IE=0.3mA
-
-
f=100Hz, Rg=10kohms
CLASSIFICATION
E
F
hFE(1)
150-300
250-500
MARKING
PE
PF
MAX
-
100
100
500
-
0.30
1.0
-
-
20
UNIT
V
V
V
mA
mW
deg C
deg C
UNIT
V
nA
nA
V
V
MHz
pF
dB
Continental Device India Limited
Data Sheet
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