CMBT8550 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
CMBT8550
SOT-23
Formed SMD Package
1
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Dissipation @ T_a=25ºC
Operating and Storage Junction
Temperature Range
2
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j, T_stg
VALUE
30
25
6
800
250
- 55 to +125
UNITS
V
V
V
mA
mW
ºC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
Collector Emitter Voltage
V_CEO
I_C=10mA, I_B=0
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
Collector Cut off Current
I_CBO
V_CB=15V, I_E=0
Emitter Cut off Current
I_EBO
V_EB=4V, I_C=0
DC Current Gain
h_FE
I_C=5mA, V_CE=1V
*I_C=100mA, V_CE=1V
I_C=500mA, V_CE=1V
Collector Emitter Saturation Voltage
V_CE(sat)
I_C=500mA, I_B=50mA
Base Emitter Saturation Voltage
V_BE(sat)
I_C=500mA, I_B=50mA
Transition Frequency
f_T
I_C=100mA, V_CE=10V, f=100MHz
Output Capacitance
C_ob
V_CB=10V, f=1MHz
MIN TYP MAX UNITS
30
V
25
V
6
V
50 nA
500 nA
45
100
400
40
0.5
V
1.2
V
100
MHz
35
pF
CLASSIFICATIONS
*h_FE
MARKING
CMBT8550
100 - 400
55
C
100 - 200
55C
D
150 - 300
55D
E
280 - 400
55E
Continental Device India Limited
Data Sheet
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