CMBT6517 Datasheet, PDF (1/3 Pages) Continental Device India Limited – HIGH-VOLTAGE TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT6517
HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT6517 = 1Z
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T_amb = 25°C
D.C. current gain
–I_C = 10 mA; –V_CE = 10 V
–V_CBO
–V_CEO
–V_EBO
–I_C
P_tot
h_FE
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
–V_CBO
Collector–emitter voltage (open base)
–V_CEO
Emitter–base voltage (open collector)
–V_EBO
Collector current (d.c.)
–I_C
Total power dissipation at T_amb = 25°C
P_tot
Storage temperature
T_stg
Junction temperature
Tj
max.
max.
max.
max.
max
min.
350 V
350 V
5V
500 mA
225 mW
30
max.
350 V
max.
350 V
max.
5V
max.
500 mA
max
225 mW
–55 to +150 ° C
max.
150 ° C
Continental Device India Limited
Data Sheet
Page 1 of 3