CMBT2484 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR ₃
1
CMBT2484
SOT23
MARKING: 1U
2
LOW NOISE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current -Continuous
IC
Device Dissipation FR-5 Board*
PD
Derate above 25 deg C
Thermal Resistance Junction to Ambient Rth (j-a)
Device Dissipation Alumina Substrate** PD
Derate above 25 deg C
Thermal Resistance Junction to Ambient Rth (j-a)
Junction and Storage Temperature Range Tj,Tstg
VALUE
60
60
6
50
225
1.8
556
300
2.4
417
-55 to +150
UNIT
V
V
V
mA
mW
mW/deg C
deg C/W
mW
mW/deg C
deg C/W
deg C
*FR-5=1.0X0.75X0.062 in
**Alumine=0.4x0.3x0.024 in 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise noted)
CHARACTERISTICS
SYMBOL TEST CONDITION
MIN TYP MAX UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
VCEO
VCBO
VEBO
ICBO
IC=10mA, IB=O
IC=10uA, IE=0
IE=10uA, IC=0
VCB=45V, IE=0
60
-
-
V
60
-
-
V
6.0
-
-
V
-
-
10
nA
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
VCB=45V, IE=0
TA=150 deg C
IEBO VEB=5V, IC=0
hFE
IC=1mA, VCE=5V
IC=10mA, VCE=5V
VCE(Sat) IC=1mA,IB=0.1mA
VBE(on) IC=1mA, VCE=5V
-
-
10
uA
-
-
10
nA
250
-
-
-
-
800
-
- 0.35
V
-
- 0.95
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Noise Figure
Cobo
Cibo
NF
VCB=5V, IE=0
f=1MHz
VBE=0.5V, IC=0
f=1MHz
IC=10uA, VCE=5V
RS=10 kohms
f=1kHz, BW=200Hz
-
-
6.0
pF
-
-
9.0
pF
-
-
4.0
dB
Continental Device India Limited
Data Sheet
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