CLL4150 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – HIGH SPEED SWITCHING DIODE

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
CLL4150
SOD - 80C
Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a black band
Hermetically Sealed, Glass Silicon Diodes
Intended for General Purpose use in Computer and Industrial Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non Repetitive Peak Forward Current t=1 µs
t=1 ms
t=1 s
Power Dissipation up to T_a=25ºC
Storage Temperature
Junction Temperature
SYMBOL
V_RRM
V_R
*I_F
I_FRM
I_FSM
*P_tot
T_stg
T_j
VALUE
75
50
300
600
4.0
1.0
0.5
500
- 65 to 200
200
THERMAL RESISTANCE
Junction to tie point
R_{th (j-tp)}
300
Junction to Ambient in free air
*R_{th (j-a)}
350
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Forward Voltage
V_F
I_F=1mA
0.54
I_F=10mA
0.66
I_F=50mA
0.76
I_F=100mA
0.82
I_F=200mA
0.87
Reverse Breakdown Voltage
V_BR
I_R=100µA
75
Reverse Current
I_R
V_R= 50V
V_R=50V, T_j=150ºC
DYNAMIC CHARACTERISTICS
Diode Capacitance
Reverse Recovery Time
Forward Recovery Time
C_d
V_R=0V, f=1MHz
t_rr
I_F=10mA, to I_R=1mA,R_L=100Ω
Measured @ I_R=0.1mA
.
t_fr
I_F=200mA, t_r =0.4ns
Measured @ V_F=1V
*Device mounted on an FR4 printed circuit board
CLL4150Rev201002E
MAX
0.62
0.74
0.86
0.92
1.00
100
100
2.5
6.0
10
UNIT
V
V
mA
mA
A
A
A
mW
ºC
ºC
K/W
K/W
UNIT
V
V
V
V
V
V
nA
µA
pF
ns
ns
Continental Device India Limited
Data Sheet
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