CLD667 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CLD667, CLD667A
TO-92
Plastic Package
E^CB
Low Frequency Power Amplifier
Complementary CLB647/CLB647A
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CLD667
Collector Base Voltage
V_CBO
120
Collector Emitter Voltage
V_CEO
80
CLD667A
120
100
Emitter Base Voltage
V_EBO
5.0
Collector Current
I_C
1.0
Collector Current Peak
I_CP
2.0
Collector Power Dissipation
P_C
0.9
Junction Temperature
T_j
150
Storage Temperature
T_stg
- 55 to +150
UNITS
V
V
V
A
A
W
ºC
ºC
ABSOLUTE MAXIMUM RATINGS(T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
V_CBO
V_CEO
V_EBO
I_CBO
*h_FE
V_{CE (sat)}
V_{BE (on)}
I_C=10µA, I_E=0
I_C=1mA, I_B=0
I_E=10µA, I_C=0
V_CB=100V, I_E = 0
**V_CE=5V, I_C=150mA
**V_CE=5V, I_C=500mA
**I_C=500mA, I_B=50mA
**V_CE=5V, I_C=150mA
Transition Frequency
f_T
**V_CE=5V, I_C=150mA
Collector Output Capacitance
C_Ob
V_CB=10V, I_E=0, f=1MHz
CLD667
>120
>80
>5.0
<10
60 - 320
>30
<1.0
<1.5
Typ 140
Typ 12
CLD667A
>120
>100
>5.0
<10
60 - 200
>30
<1.0
<1.5
Typ 140
Typ 12
UNITS
V
V
V
µA
V
V
MHz
pF
*h_FE Classifications
**Pulse Test
CLD667_667A Rev111209E
Continental Device India Limited
CLD667
CLD667A
B : 60 - 120
B : 60 - 120
Data Sheet
C : 100 - 200
C : 100 - 200
D : 160 - 320
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