CL100S Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN/PNP SILICON PLANAR TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP SILICON PLANAR TRANSISTORS
CL100S NPN
CK100S PNP
TO-39
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCEO
50
Collector -Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
5.0
Collector Current
ICM
1.0
Power Dissipation @ Ta=25 deg C
PD
800
Derate Above 25 deg C
5.33
Power Dissipation @ Tc=25 deg C
PD
3.0
Derate Above 25 deg C
20
Operating & Storage Junction
Tj, Tstg
-55 to +175
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Emitter Voltage
VCEO IC=1mA, IB=0
50
Collector -Base Voltage
VCBO IC=100uA, IE=0
60
Emitter Base Voltage
VEBO IE=100uA, IC=0
5.0
Collector Cut off Current
ICBO VCB=40V, IE=0
-
Emitter Cut off Current
IEBO VEB=5V, IC=0
-
DC Current Gain
hFE* 2mA, VCE=5V
20
Collector -Emitter (sat) Voltage
VCE(sat)* IC=150mA, IB=15mA
-
*Pulse Condition : Pulse Width =300us, Duty Cycle=2%
TYP
-
-
-
-
MAX
-
1.0
1.0
-
0.60
UNIT
V
V
V
A
mW
mW/deg C
W
mW/deg C
deg C
UNIT
V
V
V
uA
uA
V
Continental Device India Limited
Data Sheet
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