CL100 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTORS

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
CL 100, A, B
CK 100, A, B
TO-39
Metal Can Package
CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range
Of Medium Voltage And Current Amplifier Applications.
Complementary CK100, A, B
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
V_CER
50
Collector -Base Voltage
V_CBO
60
Emitter Base Voltage
V_EBO
5
Collector Current-Continuous
I_CM
1
Power Dissipation @ Ta=25ºC
P_D
800
Derate above 25ºC
5.33
Total device dissipation @ Tc=25ºC
P_D
3
Derate above 25ºC
20
Operating And Storage Junction
T_j, T_stg
-55 to +175
Temperature Range
UNITS
V
V
V
A
mW
mW /°C
W
mW /°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Breakdown Voltage BV_CER * I_C =10mA, I_B =0
50
Collector Base Breakdown Voltage BV_CBO I_C =100µA, I_E =0
60
Emitter Base Breakdown Voltage
BV_EBO I_E=100µA, I_C=0
5
Collector Leakage Current
I_CBO V_CB=40V, I_E=0
Emitter Leakage Current
I_EBO V_EB=4V, I_E=0
DC Current Gain
h_FE * I_C=150mA,V_CE=10V
40
Base Emitter On Voltage
V_BE(on)* V_CE=1V, I_C=150mA,
Collector Emitter (Sat) Voltage
V_CE(sat)* I_C=150mA,I_B=15mA
CLASSIFICATION
HFE
A
40-120
B
100-300
*Pulse Condition : PW <300us, Duty Cycle < 2%
TYP MAX
50
1
300
0.9
0.6
UNIT
V
V
V
nA
µA
V
V
Continental Device India Limited
Data Sheet
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