CJF6107 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON PLANAR POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR POWER TRANSISTOR
CJF6107
TO-220FP Fully _Isolated
Plastic Package
General Purpose ^{Amplifier and Switching Applications.}
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec,R.H.
<30%, T_A=25ºC )
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
(1) V_ISOL (a)
(b)
I_C
I_B
P_D**
P_D
T_j,T_stg
80
70
5
3500
1500
7
10
3
34
0.27
2
0.016
- 65 to +150
V
V
V
V_RMS
V_RMS
A
A
A
W
W/ºC
W
W/ºC
ºC
THERMAL RESISTANCE
From Junction to Case
From Junction to Ambient
R_{th (j-c)**}
R_{th (j-a)}
3.7
62.5
ºC/W
ºC/W
Lead Temperature for Soldering Purpose
T_L
260
ºC
**Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location
beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs.
(1) RMS Isolation Voltage : (a) 3500 V_RMS with Package in Clip Mounting Position (b) 1500 V_RMS with Package
in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX UNIT
Collector Emitter sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
V_{CEO (sus)} * I_C=100mA, I_B=0
70
V
I_CES
V_CE=80V, I_B=0
1
µA
I_CEX
V_CE=80V, V_EB(off)=1.5V
1
µA
I_EBO
V_EB=5V, I_C=0
1
µA
Continental Device India Limited
Data Sheet
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