CJF44HNPN Datasheet, PDF (1/4 Pages) Continental Device India Limited – SILICON PLANAR POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
CJF44H11 NPN
CJF45H11 PNP
TO-220FP Fully Isolated
Plastic Package
General Purpose Power Amplification and Switching such as Output or Driver Stages
in Applications
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec,R.H.
<30%, T_A=25ºC )
Collector Current -Continuous
- Peak
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
V_CEO
V_EBO
(1) V_ISOL (a)
(b)
I_C
P_D
P_D
T_j,T_stg
80
5
3500
1500
10
20
50
1.67
2
0.016
- 55 to +150
V
V
V_RMS
V_RMS
A
A
W
W/ºC
W
W/ºC
ºC
THERMAL RESISTANCE
From Junction to Ambient
From Junction to Case
R_{th (j-a)}
R_{th (j-c)}
62.5
3.5
ºC/W
ºC/W
(1) RMS Isolation Voltage : (a) 3500 V_RMS with Package in Clip Mounting Position (b) 1500 V_RMS with Package
in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX UNIT
Collector Emitter sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
V_{CEO (sus)}
I_CES
I_EBO
V_CE(Sat)
V_BE(Sat)
h_FE
I_C=30mA, I_B=0
V_CE=Rated V_CEO, V_BE=0
V_EB=5V, I_C=0
I_C=8A, I_B=0.4A
I_C=8A, I_B=0.8A
I_C=2A, V_CE=1V
I_C=4A, V_CE=1V
80
V
1
µA
10
µA
1.85
V
1.5
V
60
35
Continental Device India Limited
Data Sheet
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