English
Language : 

CJF31 Datasheet, PDF (1/4 Pages) Continental Device India Limited – SILICON PLANAR POWER TRANSISTORS
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
NPN
CJF31
CJF31A
CJF31B
CJF31C
PNP
CJF32
CJF32A
CJF32B
CJF32C
TO-220FP Fully Isolated
Plastic Package
Designed for use in General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
CJF31
CJF32
40
40
IB
PD
PD
Tj,Tstg
CJF31A CJF31B
CJF32A CJF32B
60
80
60
80
5
3
5
1
40
0.32
2
0.016
-65 to +150
CJF31C
CJF32C
100
100
UNIT
V
V
V
A
A
A
W
W/ºC
W
W/ºC
ºC
THERMAL RESISTANCE
From Junction to Ambient
From Junction to Case
Rth(j-a)
Rth(j-c)
62.5
3.125
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter (sus) Voltage
VCEO (sus) * IC=30mA, IB=0
CJF31, CJF32
40
CJF31A, CJF32A
60
CJF31B, CJF32B
80
CJF31C, CJF32C
100
MAX
-
-
-
-
ºC/W
ºC/W
UNIT
V
V
V
V
Collector Cut off Current
Collector Cut off Current
Emitter Cut off Current
ICEO
CJF31/31A, CJF32/32A
VCE=30V, IB=0
-
0.3
mA
CJF31B/31C, CJF32B/32C -
0.3
mA
VCE=60V, IB=0
ICES
VCE=Rated VCES, VEB=0
IEBO
VBE=5V, IC=0
-
200
µA
-
1.0
mA
Continental Device India Limited
Data Sheet
Page 1 of 4