CJF15032NPN Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON PLANAR POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
CJF15032 NPN
CJF15033 PNP
TO-220FP Fully Isolated
Plastic Package
Designed For Use As High - Frequency Drivers in Audio Amplifiers.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec,R.H.
<30%, T_A=25ºC )
Collector Current - Continuous
- Peak
Base Current
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
THERMAL RESISTANCE
From Junction to Ambient
From Junction to Case
SYMBOL
V_CBO
V_CEO
V_EBO
(1) V_ISOL (a)
(b)
I_C
I_B
P_D
P_D
T_j,T_stg
R_{th (j-a)}
R_{th (j-c)}
VALUE
250
250
5
3500
1500
8
16
2
50
0.4
2
0.016
-65 to +150
62.5
2.5
UNIT
V
V
V
V
V
A
A
A
W
W/ºC
W
W/ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter (sus) Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
SYMBOL
V_{CEO (sus)} *
I_CBO
I_EBO
h_FE *
V_CE(Sat) *
V_BE(on) *
TEST CONDITION
I_C=10mA, I_B=0
V_CB=150V, I_E=0
V_EB=5V,I_C=0
I_C=0.5A, V_CE=5V
I_C=1.0A, V_CE=5V
I_C=2.0A, V_CE=5V
I_C=1A, I_B=0.1A
I_C=1.0A, V_CE=5V
MIN MAX
250
-
-
10
-
10
50
-
50
-
10
-
-
0.5
-
1.0
UNIT
V
µA
µA
V
V
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product **
f_T
I_C=500mA, V_CE=10V
30
-
f_test=1MHz
(1) RMS Isolation Voltage : (a) 3500 V_RMS with Package in Clip Mounting Position (b) 1500 V_RMS with
Package in Screw Mounting Position (for 1sec, R.H.<30%Ta=25ºC; Pulse Test: Pulse Width <300µs,
Duty Cycle<2%
MHz
* Pulse Test: Pulse Width < 300µs, Duty Cycle <2 %
** f_T= Ih_fel f_test.
Continental Device India Limited
Data Sheet
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