CJF15030NPN Datasheet, PDF (1/4 Pages) Continental Device India Limited – SILICON PLANAR POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
CJF15030 NPN
CJF15031 PNP
TO-220FP Fully Isolated
Plastic Package
Designed for General Purpose Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec,R.H.
<30%, T_A=25ºC )
Collector Current - Continuous
Collector Current - Peak
Base Current
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
(1) V_ISOL (a)
(b)
I_C
I_C
I_B
P_D**
P_D
T_j,T_stg
150
150
5
3500
1500
8
16
2
36
0.29
2
0.016
- 65 to +150
V
V
V
V_RMS
V_RMS
A
A
A
W
W/ºC
W
W/ºC
ºC
THERMAL RESISTANCE
From Junction to Ambient
From Junction to Case
R_{th (j-a)}
R_{th (j-c)**}
62.5
3.5
ºC/W
ºC/W
Lead Temperature for Soldering Purpose
T_L
260
ºC
**Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location
beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs.
(1) RMS Isolation Voltage : (a) 3500 V_RMS with Package in Clip Mounting Position (b) 1500 V_RMS with Package
in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX UNIT
Collector Emitter sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
V_{CEO (sus)} *
I_CBO
I_CEO
I_EBO
I_C=10mA, I_B=0
V_CB=150V, I_E=0
V_CE=150V, I_B=0
V_EB=5V,I_C=0
150
V
10
µA
10
µA
10
µA
Continental Device India Limited
Data Sheet
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