CJF100 Datasheet, PDF (1/4 Pages) Continental Device India Limited – SILICON PLANAR POWER DARLINGTON TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS
NPN PNP
CJF100 CJF105
CJF101 CJF106
CJF102 CJF107
TO-220FP Fully Isolated
Plastic Package
Power Darlington for Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
CJF100
CJF105
CJF101 CJF102
CJF106 CJF107
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec, R.H.
<30%, T_A=25ºC )
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation @ T_C=25ºC
Derate Above 25ºC
Total Power Dissipation @ T_A=25ºC
Derate Above 25ºC
Operating And Storage Junction
V_CBO
V_CEO
V_EBO
(1) V_ISOL (a)
(b)
I_C
I_CM
I_B
P_tot
P_tot
T _j, T_stg
60
80
100
V
60
80
100
V
5.0
3500
1500
V
V_RMS
8.0
A
15
1.0
A
80
W
0.64
W/ºC
2.0
W
0.016
W/ºC
- 65 to +150
ºC
Temperature Range
(1) RMS Isolation Voltage : (a) 3500 V_RMS with Package in Clip Mounting Position (b) 1500 V_RMS with Package in
Screw Mounting Position (for 1sec, R.H.<30%Ta=25ºC; Pulse Test: Pulse Width </=300µs, Duty Cycle</=2%)
THERMAL RESISTANCE
Characteristics
From Junction to Ambient
From Junction to Case
SYMBOL
R_th(j-a)
R_th(j-c)
MAX
62.5
1.56
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Collector Emitter Sustaining Voltage
Collector Cut Off Current
Emitter Cut Off Current
V_{CEO (sus)} *
I_C=30mA, I_B=0
CJF100/105
60
CJF101/106
80
CJF102/107
100
I_CEO
V_CE= I/2 Rated V_CEO, I_B=0
-
I_CBO
V_CB= Rated V_CBO, I_E=0
-
I_EBO
V_EB=5V, I_C=0
-
-
V
-
V
-
V
50
µA
50
µA
8.0
mA
Continental Device India Limited
Data Sheet
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