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CJD86 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTOR
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
CJD86
DPAK (TO-252)
Plastic Package
For High Speed Switching Application
ABSOLUTE MAXIMUM RATINGS (Tc=25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Mounted on Ceramic Board (250mm2
X 8.0 mm)
VCBO
VCEO
VEBO
IC
ICP
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
VALUE
60
50
6.0
3.0
6.0
0.5
1.5
150
- 55 to +150
UNITS
V
V
V
A
A
W
W
ºC
ºC
*These ratings are applicable when surface mounted on the minimum pad sizes recommended. (see page no 3)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
VCEO
VCBO
VEBO
IC=1mA, IB=0
IC=10µA, VCE=2V
IE=10µA, IC=0
Collector Cut Off Current
ICBO
VCB =40V, IE=0
Emitter Cut Off Current
IEBO
VEB=4V, IC = 0
DC Current Gain
*hFE
**IC=100mA, VCE=2V
IC =3A, VCE=2V
MIN TYP MAX
50
60
6.0
1.0
1.0
100
560
35
UNITS
V
V
V
µA
µA
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
fT
VCE=10V, IC=50mA
Cob
VCB=10V, IE=0, f=1MHz
150
MHz
25
pF
**hFE Classifications
MARKING
XY= Date Code
R : 100 - 200,
CDIL
MJD86R
XY MX
S : 140 - 280,
CDIL
MJD86S
XY MX
T : 200 - 400,
CDIL
MJD86T
XY MX
U : 280 - 560
CDIL
MJD86U
XY MX
CDIL
MJD86
XY MX
**Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
CJD86Rev100605E
Continental Device India Limited
Data Sheet
Page 1 of 4