CJD3439 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS
CJD3439
DPAK (TO-252)
Plastic Package
Designed for use in Line Operated Equipment Requiring High f_T
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Total Power Dissipation at T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_j, T_stg
THERMAL CHARACTERISTICS
Junction to Case
R_{th (j-c)}
VALUE
350
450
5.0
0.3
150
15
0.12
- 65 to +150
8.33
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Sustaining Voltage
V_CEO(sus)
I_C=5mA, I_B=0
Collector Cut Off Current
I_CEO
V_CE=300V, I_B=0
Collector Cut Off Current
I_CEX
V_CE=450V, V_EB(off)=1.5V
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
I_CBO
I_EBO
h_FE
V_{CE (sat)}
V_{BE (sat)}
V_{BE (on)}
V_CB=350V, I_E=0
V_BE=5V, I_C=0
I_C=2mA, V_CE=10V
I_C=20mA, V_CE=10V
I_C=50mA, I_B=4mA
I_C=50mA, I_B=4mA
I_C=50mA, V_CE=10V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
SYMBOL
f_T
C_0b
h_fe
TEST CONDITION
I_C=10mA, V_CE=10V, f=5MHz
V_CB=10V, I_E=0, f=1MHz
I_C=5mA, V_CE=10V, f=1KHz
MIN TYP MAX
350
20
500
20
20
30
15
200
0.5
1.3
0.8
MIN TYP MAX
15
10
25
MARKING
XY= Date Code
CDIL
CJD3439
XY MX
UNIT
V
V
V
A
mA
W
W/ºC
ºC
ºC/W
UNIT
V
µA
µA
µA
µA
V
V
V
UNIT
MHz
pF
CJD3439Rev300606E
Continental Device India Limited
Data Sheet
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