CJD204R Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON POWER TRANSISTOR
Pin Configurations:-
Pin 1 :- Emitter
Pin 2 :- Collector
Pin 3 :- Base
CJD204R
TO-251
I PAK Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Peak Value tp=10ms)
Collector Current (Non Repetitive Peak
Value t_p=2ms)
Base Current
Total Device Dissipation at T_mb=25 ºC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Mounting Base
Junction to Ambient in free air
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_CSM
I_B
P_tot
T_j, T_stg
P_{th (j-mb)}
P_{th (j-a)}
ELECTRICAL CHARACTERISTICS (T_a=25 ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
I_CEO
V_CE=30V, I_B = 0
Collector Cut Off Current
I_CBO
V_CB=40V, I_E = 0, T_j=150 ºC
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C = 0
Collector Emitter Voltage
V_CEO
I_C=0.2A, I_B=0
Base Emitter On Voltage
*V_{BE (on)}
I_C=3A, V_CE=2V
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=3A, I_B=0.3A
I_C=6A, I_B=0.6A
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=6A, I_B=0.6A
DC Current Gain
*h_FE
I_C=2A, V_CE=2V
Cut Off Frequency
f _hfe
I_C=0.3A, V_CE=3V
Transition Frequency
f_T
I_C=0.3A, V_CE=3V, f=1MHZ
Forward Bias Second Breakdown
Collector Current
I_SB
V_CE=40V, tp=0.1s
*Pulse test : Pulse Width < 300µs, Duty Cycle < 2%
CJD204R Rev300410E
VALUE
60
60
5
8
12
25
3
60
- 65 to +150
2.08
70
MIN
MAX
0.2
1.0
0.5
60
1.5
1.0
1.5
2.0
30
25
7.0
1.5
UNITS
V
V
V
A
A
A
A
W
ºC
K/W
K/W
UNITS
mA
mA
mA
V
V
V
V
V
kHZ
MHz
A
Continental Device India Limited
Data Sheet
Page 1 of 4