CJD175 Datasheet, PDF (1/3 Pages) Continental Device India Limited – EPITAXIAL SILICON POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
CJD175
CJD177
CJD179
NPN
CJD176
CJD178
CJD180
PNP
DPAK (TO-252)
Plastic Package
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Power Dissipation @ T_a=25ºC
Derate above 25ºC
Power Dissipation @ T_c=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_D
P_D
T_j, T_stg
CJD175
CJD176
45
45
CJD177
CJD178
60
60
5.0
3.0
7.0
1.25
10
30
- 65 to +150
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
R_{th (j-a)}
R_{th (j-c)}
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
I_CBO
V_CB=45V_, I_E=0
V_CB=60V_, I_E=0
V_CB=80V_, I_E=0
Emitter Cut off Current
I_EBO
V_EB=5V, I_C=0
Collector Emitter Sustaining Voltage *V_{CEO (sus)}
I_C=100mA, I_B=0
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
*V_{CE (sat)}
*V_{BE (on)}
*h_FE
*h_FE Group
I_C=1A, I_B=0.1A
I_C=1A, V_CE=2V
I_C=150mA, V_CE=2V
I_C=1A, V_CE=2V
I_C=150mA, V_CE=2V
Transition Frequency
f_T
*Pulse test:- Pulse width=300µs, Duty cycle=1.5%
Only CJD175/76/79
I_C=250mA, V_CE=10V
100
4.16
CJD175/76
CJD177/78
CJD179/80
CJD175/76
CJD177/78
CJD179/80
-6
- 10
- 16
CJD179
CJD180
80
80
UNIT
V
V
V
A
A
W
mW/ºC
W
ºC
ºC/W
ºC/W
MIN MAX UNIT
100
µA
100
µA
100
µA
1.0 mA
45
V
60
V
80
V
0.8
V
1.3
V
40
15
40
100
63
160
100
250
3.0
ΜΗz
CJD175_180Rev110106E
Continental Device India Limited
Data Sheet
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