CIL9359 Datasheet, PDF (1/2 Pages) Continental Device India Limited – PNP SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON EPITAXIAL TRANSISTOR
CIL9359
TO-237
BCE
PNP Vertical Retrace Switching Transistor
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current (DC)
IC
Peak
IC
Power Dissipation
PD
Junction Temperature Range
TJ
Lead Soldering, 1/16" from body ,10sec TL
VALUE
40
40
5.0
2.0
3.0
900
-65 to +150
280
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
Collector -Emitter Voltage
VCEO* IC=10mA, IB=0
40
-
Emitter Base Voltage
VEBO
IE=10uA, IC=0
5.0
-
Collector Cut off Current
ICBO
VCB=40V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=4V, IC=0
-
-
DC Current Gain
hFE
IC=10mA,VCE=10V
100
-
IC=1.5A,VCE=10V*
40
-
Collector Emitter Saturation Voltage
VCE(Sat) * IC=1A,IB=100mA
-
-
Forward Emitter on Base Voltage
VEB(F) * IC=1A, VCE=1V
-
-
Switching Time
Turn on Time
ton
VCC=30V,VEB(off)=
-
-
3.8V, IC=500mA, IB1=
50mA
Turn off Time
toff
VCC=30V, IC=500mA
-
-
IB1=1B2=50mA
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
MAX
-
-
50
100
400
-
1.0
1.2
150
800
UNIT
V
V
V
A
A
mW
deg C
deg C
UNIT
V
V
nA
nA
V
V
ns
ns
Continental Device India Limited
Data Sheet
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