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CIL928A Datasheet, PDF (1/4 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
CIL928A PNP
CIL2328A NPN
TO-92
Plastic Package
ECB
For use in Audio Power Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Power Dissipation @ Ta=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
Tj, Tstg
VALUE
30
30
5.0
1.5
2.0
0.7
- 55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Base Voltage
VCBO
IC=100µA, IE=0
30
Collector Emitter Voltage
VCEO
IC=10mA, IB=0
30
Emitter Base Voltage
VEBO
IE=1mA, IC=0
5
Collector Cut off Current
ICBO
VCB=30V, IE = 0
Emitter Cut off Current
IEBO
VEB=5V, IC = 0
DC Current Gain
*hFE
VCE=2V, IC=500mA
100
Collector Emitter Saturation Voltage
*VCE(sat)
IC=1.5A, IB=30mA
Base Emitter On Voltage
*VBE(on)
VCE=2V, IC=500mA
Transition Frequency
fT
IC=500mA, VCE=2V
Output Capacitance
Cob
IE=0, VCB=10V, f=1MHz
NPN
PNP
TYP
120
30
48
MAX
0.1
0.1
320
2.0
1.0
UNITS
V
V
V
A
A
W
ºC
UNITS
V
V
V
µA
µA
V
V
MHz
pF
pF
*hFE Classification
*Pulse Test: Pulse Width <300µs, Duty Cycle<2%
O : 100 - 200 ,
Y : 160 - 320
Continental Device India Limited
Data Sheet
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