CIL9263 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CIL9263
TO237
BCE
High Voltage Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation
Operating & Storage Junction
Temperature Range
Lead Temperature for Soldering 1/16"
From Body, For 10 Seconds
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
TL
VALUE
250
250
6.0
100
1.0
-65 to +150
260
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
50
Junction to Ambient
Rth(j-a)
125
ELECTRICAL CHARACTERISTICS (Ta=25 deg C)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX
Collector -Base Voltage
VCBO IC=100uA, IE=0
250
-
Collector -Emitter Voltage
VCEO
IC=7mA, IB=0
250
-
Emitter Base Voltage
VEBO
IE=100uA, IC=0
6.0
-
Collector Cut off Current
ICBO
VCB=250V, IE=0
-
1.0
Emitter Cut off Current
IEBO
VEB=6V, IC=0
-
500
DC Current Gain
hFE
IC=20mA,VCE=10V
75
-
Collector Emitter Saturation Voltage VCE(Sat) IC=20mA,IB=2mA
-
2.5
Cut off frequency
ft
VCE=10V, IC=20mA
60
-
Fead Back Capacitance
Ccb
VCB=20V, IE=0, f=1MHz
-
3.0
UNIT
V
V
V
mA
W
deg C
deg C
deg C/W
deg C/W
UNIT
V
V
V
uA
nA
V
-
pF
Continental Device India Limited
Data Sheet
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