CIL351 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTORS

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTORS
CIL351/352
TO-18
Metal Can Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
R_{th (j-a)}
R_{th (j-c)}
VALUE
70
75
6.0
200
300
1.72
750
4.29
- 65 to +200
583
233
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
70
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
75
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
6.0
Collector Cut Off Current
I_CBO
V_CB=20V, I_E=0
DC Current Gain
h_FE
I_C=1mA, V_CE=10V
CIL351
100
CIL352
200
Collector Emitter Saturation Voltage
*V_{CE (sat)} I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
Base Emitter on Voltage
V_{BE (on)}
I_C=10mA, V_CE=5V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
SYMBOL TEST CONDITION MIN
f_T
I_C=10mA, V_CE=5V,
f=100MHz
*Pulse Condition: Pulse Width <300µs, Duty Cycle <2%
CIL351_352Rev_1 120504E
UNIT
V
V
V
mA
mW
mW/ ºC
mW
mW/ ºC
ºC
ºC/W
ºC/W
TYP
MAX
25
UNIT
V
V
V
nA
250
480
0.25
V
0.60
V
1.0
V
TYP
100
MAX
UNIT
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3