CIL2482 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CIL2482
TO-237
BCE
High Voltage Switching & Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
300
Collector -Emitter Voltage
VCEO
300
Emitter Base Voltage
VEBO
7.0
Collector Current
IC
100
Base Current
IB
50
Collector Power Dissipation
PC
900
Junction and Storage Temperature
Tj,Tstg
-55 to +150
Range
ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise noted)
CHARACTERISTICS
SYMBOL TEST CONDITION
MIN TYP
Collector Cut off Current
ICBO
VCB=240V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=7V, IC=0
-
-
DC Current Gain
hFE
IC=4mA, VCE=10V
20
-
IC=20mA, VCE=10V
30
-
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=1mA
-
-
Base Emitter Saturation Voltage
VBE(Sat) IC=10mA,IB=1mA
-
-
Transition Frequency
ft
IC=20mA, VCE=10V
50
-
Collector Output Capacitance
Cob
VCB=20V, IE=0, f=1MHz
-
3.0
MAX
1.0
1.0
-
150
1.0
1.0
-
-
UNIT
V
V
V
mA
mA
mW
deg C
UNIT
uA
uA
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 2