CIL1020 Datasheet, PDF (1/2 Pages) Continental Device India Limited – PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS
CIL1020 (PNP)
CIL2655 (NPN)
TO-237
BCE
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
50
Collector -Emitter Voltage
VCEO
60
Emitter Base Voltage
VEBO
6
Collector Current
IC
3
Power Dissipation Ta=25 deg C
PC
900
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Emitter Voltage
VCEO IC=10mA, IB=0
50
Collector Cut off Current
ICBO
VCB=50V, IE=0
-
Emitrer Cut off Current
IEBO
VEB=5V, IC=0
-
DC Current Gain
hFE
IC=500mA,VCE=2V * 70
IC=1.5A,VCE=2V
40
Collector Emitter Saturation Voltage VCE(Sat) IC=1A, IB=50mA
-
Base Emitter Saturation Voltage
VBE(Sat) IC=1A, IB=50mA
-
TYP
-
-
-
-
-
-
-
Dynamic Characteristics
Gain Bandwidth Product
Output Capacitance
Switching Time
Turn on Time
Storage Time
Fall Time
ft
VCE=2V,IC=50mA
-
100
Cob NPN VCB=10V, IE=0
-
30
PNP f=1MHz
-
40
ton
VCC=30V, IB1=1B2
-
0.1
tstg
=50mA, RL=30 ohms
1.0
tf
Duty Cycle=1%
0.1
CLASSIFICATION
hFE *
O
70-140
Y
120-240
UNIT
V
V
V
A
mW
deg C
MAX
-
1.0
1.0
240
-
0.50
1.2
UNIT
V
uA
uA
V
V
-
MHz
-
pF
-
pF
us
us
us
Continental Device India Limited
Data Sheet
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