CFD13003 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
PIN 1: BASE
PIN 2: COLLECTOR
PIN 3: EMITTER
CFD13003
TO-126FP
Plastic Package
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter (sus) Voltage
V_CEO
Emitter Base Voltage
Collector Current Continuous
V_EBO
I_C
Peak (1)
I_CM
Base Current Continuous
I_B
Peak (1)
I_BM
Emitter Current Continuous
I_E
Peak (1)
I_EM
Power Dissipation at T_a=25 ºC
P_D
Derate Above 25ºC
Power Dissipation at T_c=25 ºC
P_D
Derate Above 25ºC
Operating and Storage Junction Temperature
Range
T_j, T_stg
VALUE
600
400
9.0
2.5
4.0
0.75
1.5
2.25
4.5
1.4
11.2
45
360
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
R_{th (j-c)}
R_{th (j-a)}
T_L
2.77
89
275
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T_a=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
Collector Emitter (sus) Voltage
*V_CEO(sus)
I_C=10mA, I_B=0
Collector Cut-Off Current
I_CBO
V_CB=600V_, I_E=0
Emitter Cut-Off Current
V_CB=600V_, I_E=0, T_c=100ºC
I_EBO
V_EB=9V, I_C=0
*Pulse Test: PW=300µs, Duty Cycle=2%
CFD13003Rev 300905D
ºC/W
ºC/W
ºC
MIN TYP MAX
600 -
-
400 -
-
-
- 1.0
5.0
-
- 1.0
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 3