CFD1275 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR DALINGTON POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR DALINGTON POWER TRANSISTORS
CFD1275, CFD1275A
TO-220FP Fully Isolated
Plastic Package
Complementary CFB949, CFB949A
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, T_a = 25^oC)
Collector Current Peak
Collector Current
Collector Power Dissipation @T_c=25^oC
@T_a=25^oC
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
** V_ISOL (a)
(b)
I_CP
I_C
P_C
T_j
T_stg
CFD1275
60
CFD1275A
80
60
80
5
3500
1500
4
2
35
2
150
- 55 to +150
UNIT
V
V
V
V_RMS
V_RMS
A
A
W
W
ºC
ºC
** RMS Isolation Voltage: (a) 3500 V_RMS with Package in Clip Mounting Position (b) 1500 V_RMS with Package
in Screw Mounting Position (for 1sec, R.H.<30%, T_a=25^oC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
Collector Cut Off Current
I_CBO
V_CB =60V, I_E=0, CFD1275
V_CB =80V, I_E=0, CFD1275A
I_CEO
V_CE =30V, I_B=0, CFD1275
V_CE =40V, I_B=0, CFD1275A
Emitter Cut Off Current
I_EBO
V_EB =5V, I_C=0
Collector Emitter Voltage
V_CEO
I_C=30mA, I_B=0
CFD1275
CFD1275A
DC Current Gain
h_FE
*h_FE
V_CE =4V, I_C =1A
V_CE =4V, I_C =2A
Collector Emitter Saturation Voltage
V_CE(sat)
I_C =2A, I_B =8mA
Base Emitter On Voltage
V_BE
V_CE =4V, I_C =2A
Turn On Time
t_on
Storage Time
t_stg
I_C =2A, I_B1 = - I_B2=8mA
Fall Time
t_r
MIN TYP MAX
1.0
1.0
2.0
2.0
2.0
UNIT
mA
mA
mA
mA
mA
60
V
80
V
1000
1000
10000
2.5 V
2.8 V
0.5
µs
4.0
µs
1.0
µs
*h_FE Classification
R : 1000 - 2500 Q : 2000 - 5000 P : 4000 - 10000
Continental Device India Limited
Data Sheet
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