CFC4662 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
CFC4662
TO-220FP Fully Isolated
Plastic Package
B _CE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, T_a = 25^oC)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation upto T_c=25ºC
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
** V_ISOL (a)
(b)
I_C
I_C
I_B
P_C
T_j
T_stg
VALUE
500
400
10
3500
1500
5
10
2
30
150
- 55 to +150
UNIT
V
V
V
V_RMS
V_RMS
A
A
A
W
ºC
ºC
** RMS Isolation Voltage: (a) 3500 V_RMS with Package in Clip Mounting Position (b) 1500 V_RMS with Package
in Screw Mounting Position (for 1sec, R.H.<30%, T_a=25^oC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Collector Capacitance
I_CBO
I_EBO
V_CEO
h_FE
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB=500V, I_E=0
V_EB=10V, I_C=0
I_C=25mA, I_B=0
I_C=1.5A, V_CE=4V
I_C=1.5A, I_B=0.3A
I_C=1.5A, I_B=0.3A
I_C=0.3A, V_CE=12V
I_E=0, V_CB=10V, f=1MHz
MIN
400
10
TYP 20
TYP 30
SWITCHING TIMES
Turn On Time
Storage Time
Fall Time
t_on
V_CC=200V, R_L=133Ω,Ι_C=1.5Α
t_stg
V_BB1=10V,V_BB2= -5V
t_f
I_B1 =0.15A, I_B2 = -0.3A
MAX
100
100
30
0.5
1.3
1.0
2.5
0.5
UNIT
µA
µA
V
V
V
MHz
pF
µs
µs
µs
Continental Device India Limited
Data Sheet
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