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CFA1046 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR POWER TRANSISTOR
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR POWER TRANSISTOR
CFA1046
TO-220FP Fully Isolated
Plastic Package
Complementary CFC2026
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, Ta = 25oC)
Collector Current
Base Current
Collector Power Dissipation @Ta=25oC
@Tc=25oC
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
** VISOL (a)
(b)
IC
IB
PC
Tj
Tstg
VALUE
60
60
7.0
3500
1500
3.0
0.5
2.0
25
150
- 55 to 150
UNIT
V
V
V
VRMS
VRMS
A
A
W
W
ºC
ºC
** RMS Isolation Voltage: (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package
in Screw Mounting Position (for 1sec, R.H.<30%, Ta=25oC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN TYP MAX UNIT
Collector Cut Off Current
ICBO
VCB = 60V, IE=0
100 µA
Emitter Cut Off Current
IEBO
VEB= 7V, IC=0
100 µA
Collector Emitter Voltage
VCEO
IC= 50mA, IB=0
60
V
DC Current Gain
*hFE
VCE = 5V, IC = 0.5A
100
300
hFE
VCE = 5V, IC = 3A
20
Collector Emitter Saturation Voltage
VCE(sat)
IC = 2A, IB = 0.2A
1
V
Base Emitter On Voltage
VBE(on)
VCE = 5V, IC = 0.5A
1
V
Transition Frequency
fT
VCE = 5V, IC = 0.5A
30
MHz
Collector Output Capacitance
Cob
VCB= 10V, IE=0, f=1MHz
45
pF
Switching Time
Turn On Time
Storage Time
Fall Time
*hFE Classification
ton
tstg
tf
Y : 100 - 200
IB1 = IB2 = 0.2A
VCC = 30V
Duty Cycle < 1%
GR : 150 - 300
0.4
µs
1.7
µs
0.5
µs
Continental Device India Limited
Data Sheet
Page 1 of 3