CDU83 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
CDU 83
TO-237
BCE
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak Collector Current
Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
ICP
PD
Tj, Tstg
VALUE
20
95
6.0
3.0
6.0
900
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
ICBO
VCB=50V, IE=0
-
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
DC Current Gain
hFE*
IC=500mA,VCE=2V
100
IC=3A,VCE=2V
75
Collector Emitter Saturation Voltage VCE(Sat) * IC=3A, IB=60mA
-
Base Emitter Saturation Voltage
VBE(Sat) * IC=3A, IB=60mA
-
TYP
-
-
-
-
-
-
Dynamic Characteristics
Output Capacitance
Cob
Gain Bandwidth Product
ft
*Pulse Test : tp=300us, Duty Cycle=2%
VCB=10V, IE=0, f=1MHz
-
45
VCE=10V, IC=50mA,
-
120
MAX
1.0
1.0
560
-
0.60
`1.50
-
-
UNIT
V
V
V
A
A
mW
deg C
UNIT
uA
uA
V
V
pF
MHz
Continental Device India Limited
Data Sheet
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