CDN055NPN Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON PLANAR POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
CDN055 NPN
CDP055 PNP
TO-3
Metal Can Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation at T_c=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j, T_stg
VALUE
50
50
6
10
57.5
- 65 to +200
UNITS
V
V
V
A
W
ºC
ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
*V_CEO
I_C=100mA, I_B=0
Collector Cut Off Current
I_CBO
V_CB=50V, I_E=0
Emitter Cut Off Current
I_EBO
V_BE=6V, I_C=0
Collector Cut Off Current
I_CEO
V_CE=50V, I_B=0
DC Current Gain
*h_FE
I_C=2A, V_CE=2V
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=2A, I_B=200mA
Base Emitter on Voltage
*V_{BE (on)}
I_C=2A, V_CE=2V
Second Breakdown Collector Current
with Base Forward Biased
IS/b VCE=20V,t=1.0 s,Nonrepetitive
MIN
50
25
2.87
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
MAX
0.2
1.0
1.0
100
1.0
1.2
UNITS
V
mA
mA
mA
V
V
A
CDN055_CDP055 Rev041109E
Continental Device India Limited
Data Sheet
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