CDL6718 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
E _CB
CDL6718
TO126
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with "T"
General Purpose Medium Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation at T_a=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
T_stg
VALUE
100
100
5.0
1.0
1.6
150
- 55 to 150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
Collector Cut Off Current
I_CBO
V_CB=80V_, I_E=0
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=350mA, I_B=35mA
DC Current Gain
Transition frequency
*h_FE
I_C=50mA, V_CE=1V
I_C=250mA, V_CE=1V
I_C=500mA, V_CE=1V
f_T
I_C=50mA, V_CE=10V,
f=100MHz
Output Capacitance
C_ob
V_CB=10V, f=1MHz
MIN TYP MAX
100
100
5.0
100
0.35
80
50
250
20
50
20
CDL6718Rev211005E
*Pulse Test: Pulse Width<380µs, Duty Cycle <2%
UNIT
V
V
V
A
W
ºC
ºC
UNIT
V
V
V
nA
V
MHz
pF
Continental Device India Limited
Data Sheet
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