CDD1933 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR
CDD1933
(9AW)
TO126
MARKING: CDD
1933
Low Freq. Power Amp.
Built in Damper Diode
Complementry CDB 1342
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak*
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
80
80
7
4
6
1.5
30
150
-55 to +150
*Single Pulse Pw=100ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP MAX
Collector Emitter Voltage
Collector Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
DC Current Gain
VCEO
IC=1mA, IB=0
80
-
-
VCBO
IC=50uA, IE=0
80
-
-
ICBO
VCB=80V, IE=0
-
-
100
IEBO
VBE=5V,IC=0
-
-
3.0
VCE(Sat)** IC=2A,IB=4mA
-
-
1.5
hFE**
IC=2A, VCE=3V
1.0
-
10
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=0.2A,
-
40
-
f=10MHz
Collector Output Capacitance
**Pulse Test
Cob
VCB=10V, IE=0
-
35
-
f=1MHz
UNIT
V
V
V
A
A
W
W
deg C
deg C
UNIT
V
V
uA
mA
V
K
MHz
pF
Continental Device India Limited
Data Sheet
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