CDB1370EF Datasheet, PDF (1/2 Pages) Continental Device India Limited – PNP SILICON EPITAXIAL POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON EPITAXIAL POWER TRANSISTOR
CDB1370EF
(9AW)
TO126
MARKING: CDB
1370
EF
Low Freq. Power Amp.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak*
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
*Single Pulse Pw=100ms
VALUE
60
60
5
2
4
1.5
25
150
-55 to +150
UNIT
V
V
V
A
A
W
W
deg C
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
VCEO
IC=1mA, IB=0
60
-
-
V
VCBO
IC=50uA, IE=0
60
-
-
V
VEBO
IE=50uA,IC=0
5
-
-
V
ICBO
VCB=60V, IE=0
-
-
10
uA
ICEO
VCE=60V,IB=0
-
-
1
uA
IEBO
VBE=4V,IC=0
-
-
10
uA
VCE(Sat)** IC=2A,IB=0,.2A
-
-
1.5
V
VBE(Sat)** IC=2A, IB=0.2A
-
-
1.5
V
hFE**
IC=0.5A, VCE=5V 100
-
300
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=0.5A,
-
15
-
MHz
f=5MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0
f=1MHz
-
80
-
pF
**Pulse Test
Continental Device India Limited
Data Sheet
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