CD9581 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CD9581
TO-92
CBE
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current
IC
Power Dissipation
PD
Operating & Storage Junction
TJ, Tstg
Temperature Range
Lead Temperature for Soldering 1/16" TL
From Body, For 10 Seconds
VALUE
60
40
7.0
100
500
-65 to +125
280
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
200
ELECTRICAL CHARACTERISTICS (Ta=25 +- 3 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Base Voltage
VCBO IC=10uA, IE=0
60
Collector -Emitter Voltage
VCEO* IC=1mA, IB=0
40
Emitter- Base Voltage
VEBO
IE=100uA, IC=0
7.0
Collector Cut-off Current
ICBO
VCB=40V, IE=0
-
ICEO
VCE=35V, IB=0
-
Emitter Cut -off Current
IEBO
VEB=7V, IC=0
-
Forward Current Transfer Ratio
hFE
IC=10mA,VCE=10V
150
IC=100uA,VCE=10V
50
Collector Emitter (Sat) Voltage
VCE(Sat) * IC=50mA,IB=10mA
-
DYNAMIC CHARACTERISTICS
Cut off frequency
ft
VCE=5V, IC=10mA
100
Noise Figure
NF
VCE=5V, IC=12uA
-
f=1kHz, Rs=k ohm
Fead Back Capacitance
Cre
VCB=10V, f=1MHz
-
Forward Current Transfer Ratio(A.C) hfe
IC=0.5mA, VCE=5V, 100
f=50 kHz
*Pulse test 300us Duty Cycle=2%
MAX
-
-
-
50
1.0
200
300
-
0.22
350
12
4.0
-
UNIT
V
V
V
mA
mW
deg C
deg C
deg C/W
UNIT
V
V
V
nA
uA
nA
V
MHz
dB
pF
Continental Device India Limited
Data Sheet
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