CD9011 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
CD9011
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
Tj, Tstg
VALUE
30
50
5.0
100
400
-55 to +125
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Emitter Voltage
VCEO
IC=10mA, IB=0
30
Collector -Base Voltage
VCBO IC=100uA, IE=0
50
Emitter Base Voltage
VEBO
IE=10uA, IC=0
5.0
Collector Cut off Current
ICBO
VCB=18V, IE=0
-
Emitter Cut off Current
IEBO
VEB=3V, IC=0
-
DC Current Gain
hFE
IC=1mA,VCE=5V
29
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=1mA
-
Dynamic Characteristics
Output Capacitance
Cob
VCB=10V,f=1MHz
-
Transition Frequency
ft
VCE=10V, IC=10mA, 250
f=100MHz
Noise Figure
NF
VCE=5V, IC=100uA
-
f=1KHz
hFE CLASSIFICATION
D 29-44, E 40-59, F 54-80, G 72-108,
J 182-273
TYP
-
-
-
-
-
-
-
-
-
-
H 97-146,
MAX
-
-
-
50
100
273
0.30
UNIT
V
V
V
nA
nA
V
3.5
pF
-
MHz
4.0
dB
I 132-198,
Continental Device India Limited
Data Sheet
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