CD83 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
CD83
TO126
Plastic Package
ECB
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
Emitter Base Voltage
V_CEO
V_EBO
Collector Current
I_C
Peak Collector Current
I_CP
Collector Power Dissipation
Operating and Storage Junction
Temperature Range
P_D
T_j, T_stg
VALUE
60
20
6.0
5.0
8.0
0.9
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
I_CBO
V_CB =50V, I_E=0
I_EBO
V_EB=5V, I_C = 0
*h_FE
I_C =500mA, V_CE=2V
100
I_C =3A, V_CE=2V
75
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=3A, I_B=60mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=3A, I_B=60mA
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f_T
V_CE=10V, I_C=50mA
C_{ob VCB=10V, IE=0, f=1MHz}
Pulse Test: tp=300µs, Duty Cycle=2%
TYP
120
45
UNITS
V
V
V
A
A
W
ºC
MAX
1.0
1.0
560
UNITS
µA
µA
0.5
V
1.5
V
MHz
pF
CD83Rev240205E
Continental Device India Limited
Data Sheet
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