CD2328A Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR
CD2328A
TO-92
BCE
ECB
3W AUDIO Output Amplifier Application.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
30
Collector -Emitter Voltage
VCEO
30
Emitter Base Voltage
VEBO
5.0
Collector Current Continuous
IC
1.5
Peak
ICM
2.0
Power Dissipation
PD
0.75
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector -Emitter Voltage
VCEO IC=10mA, IB=0
30
-
Collector -Base Voltage
VCBO
IC=100uA, IE=0
30
-
Emitter Base Voltage
VEBO
IE=1mA, IC=0
5.0
-
Collector Cut off Current
ICBO
VCB=30V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
-
DC Current Gain
hFE*
IC=500mA,VCE=2V 100
-
Collector Emitter Saturation Voltage VCE(Sat) * IC=1.5A, IB=30mA
-
-
Base Emitter on Voltage
VBE(on)* IC=500mA, VCE=2V
-
-
Dynamic Characteristics
Output Capacitance
Gain Bandwidth Product
Cob
VCB=10V, IE=0
-
30
f=1MHz
-
48
ft
VCE=2V,IC=500mA,
-
120
CLASSIFICATION
hFE *
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
O
100-200
Y
160-320
UNIT
V
V
V
A
A
W
deg C
MAX
-
-
-
100
100
320
2.0
1.0
UNIT
V
V
V
nA
nA
V
V
-
pF
-
pF
-
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3