CD1N4148 Datasheet, PDF (1/3 Pages) Continental Device India Limited – HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD

IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
CD1N4148
DO-35, 500mW
MARKING: Cathode band
+
4148
( no body coat)
General purpose applications. Hermetically sealed glass and the glass passivated chip Provides
excellent stability.
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C otherwise specified)
DESCRIPTION
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Reverse Voltage (Continuous)
VR
Average Forward Current
IF(AV)
Forward Current (DC)
IF
Repetitive Peak Forward Current
IFRM
Non Repetitive Peak Surge Current tp=1usec IFSM
tp=1sec
IFSM
Power Dissipation
PTA
Derating Factor
Operating & Storage Junction Temperature
Tj, Tstg
Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
80
75
150
200
450
2000
500
500
2.85
-65 to +200
UNIT
V
V
mA
mA
mA
mA
mA
mW
mW/deg C
deg C
MIN TYP MAX UNIT
Forward Voltage
Reverse Current
Reverse Breakdown Voltage
DYNAMIC CHARACTERISTICS
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
VF
IR
VBR
IF=10mA
VR=20V
VR=75V
IR=100uA
IR=20uA
-
- 1.0
V
-
- 500
nA
-
- 20
uA
80
-
-
V
75
-
-
V
Cd
VR=0V, f=1MHz
-
- 4.0
pF
Vfr
IF=50mA, tr=20ns
-
- 2.5
V
trr
IF=10mA, to IR=60mA
-
- 4.0
ns
RL=100ohms
Measured @ IR=1mA
Data Sheet
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