CD13003D Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
CD13003D
TO126
Plastic Package
With Built - in Integrated Diode between Emitter & Collector
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ T_a=25 ºC
Derate Above 25ºC
Power Dissipation @ T_c=25 ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
P_D
T_j, T_stg
VALUE
600
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
45
360
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
R_{th (j-c)}
R_{th (j-a)}
T_L
2.77
89
275
ºC/W
ºC/W
ºC
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
600
Collector Emitter (sus) Voltage
*V_CEO(sus)
I_C=10mA, I_B=0
400
Collector Cut Off Current
I_CBO
V_CB=600V_, I_E=0
1.0
Emitter Cut Off Current
V_CB=600V_, I_E=0, T_c=100ºC
5.0
I_EBO
V_EB=9V, I_C=0
1.0
*Pulse Test: PW=300µs, Duty Cycle=2%
UNIT
V
V
mA
mA
mA
CD13003D Rev_1 120310E
Continental Device India Limited
Data Sheet
Page 1 of 4