CD13003 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON POWER TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CD13003
TO-126
MARKING: CD
13003
Applications.
Suitable for Lighting, Switching Regulator and Motor Control.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
600
Collector -Emitter ( sus) Voltage
VCEO
400
Emitter -Base Voltage
VEBO
9.0
Collector Current Continuous
IC
1.5
Peak (1)
ICM
3.0
Base Current Continuous
IB
0.75
Peak (1)
IBM
1.5
Emitter Current Continuous
IE
2.25
Peak (1)
IEM
4.5
Power Dissipation @ Ta=25 deg C
PD
1.4
Derate Above 25 deg C
11.2
Power Dissipation @ Tc=25 deg C
PD
45
Derate Above 25 deg C
320
Operating And Storage Junction
Tj, Tstg
-65 to +150
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth (j-c)
3.12
Junction to Ambient
Rth (j-a)
89
Maximum Lead Temperature for
Soldering Purposes: 1/8" from Case
for 5 Seconds.
TL
275
(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
Collector -Base Voltage
VCBO IC=1mA, IE=0
600 -
Collector -Emitter ( sus) Voltage
VCEO(sus)* IC=10mA, IB=0
400 -
Collector-Cuttoff Current
ICBO VCB=600V, IE=0
-
-
VCB=600V, IE=0,TC=100 deg C -
-
Emitter-Cuttoff Current
IEBO VEB=9V, IC=0
-
-
DC Current Gain
hFE* IC=0.5A,VCE=5V
8.0 -
IC=2A,VCE=5V
5.0 -
UNIT
V
V
V
A
A
A
A
A
A
W
mW /deg C
W
mW /deg C
deg C
deg C/W
deg C/W
deg C
MAX
-
-
1.0
5.0
1.0
40
25
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
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