CD13002 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE
FAST SWITCHING POWER TRANSISTOR
CD13002
TCD13002 (Tin Lead Part)
LEAD FREE
TO-92
Plastic Package
ECB
Compact Fluorescent Lamps (CFLS)
ABSOLUTE MAXIMUM RATING (T_a =25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Peak
I_CM
Power Dissipation
P_D
Operating and Storage Junction
Temperature Range
T_j, T_stg
VALUE
600
400
9.0
1.0
1.5
1.0
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Emitter Base Voltage
V_EBO
I_E=1mA, I_C=0
Collector Cut Off Current
I_CBO
V_CB=600V, I_E = 0
Collector Cut Off Current
I_CEO
V_CE=400V, I_B = 0
Emitter Cut Off Current
I_EBO
V_EB=9V, I_C=0
DC Current Gain
h_FE
*V_CE=5V, I_C=0.1A
V_CE=5V, I_C=400mA
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=100mA, I_B=50mA
I_C=230mA, I_B=50mA
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=100mA, I_B=50mA
Fall Time
t_f
I_C=0.11A
Storage Time
t_s
I_C=0.1A, I_B1= I_B2=0.05A
Transition Frequency
f_T
V_CE=10V, I_C=0.1A,f=1MHz
MIN
600
400
9.0
15
5.0
0.05
0.12
0.82
0.07
4.0
TYP
*h_FE Classification
Note:- Product is pre selected in DC current
gain (Groups A to E). CDIL reserves the right
to ship any of the groups according to
production availability.
A
15-19
B
18-22
C
21-25
E
24-28
UNIT
V
V
V
A
A
W
ºC
MAX
100
50
100
28
20
0.11
0.24
0.88
0.4
0.9
UNIT
V
V
V
µA
µA
µA
V
V
V
µs
µs
MHz
MARKING
X = Year of Manufacturer Code
Y = Month Code
CD13002_CTD13002Rev_4 050706E
CD
13002A
XY
TCD
13002A
XY
CD
13002B
XY
TCD
13002B
XY
CD
13002C
XY
TCD
13002C
XY
CD
13002E
XY
TCD
13002E
XY
Continental Device India Limited
Data Sheet
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