CCN83 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CCN83
TO-92
Plastic Package
ECB
Any High Current Driver Application Requiring Efficient Low Loss Device
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak Collector Current
Power Dissipation @ T_a=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_CP
P_D
T_j, T_stg
VALUE
20
95
6
3
6
900
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Cut off Current
I_CBO
V_CB=50V, I_E = 0
Emitter Cut off Current
I_EBO
V_EB=5V, I_C = 0
DC Current Gain
*h_FE
I_C=500mA, V_CE=2V
100
I_C=3A, V_CE=2V
75
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=3A, I_B=60mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=3A, I_B=60mA
Output Capacitance
C_ob
I_E=0, V_CB=10V, f=1MHz
Transition Frequency
f_T
I_C=50mA, V_CE=10V
*Pulse Test: t_p=300µs, Duty Cycle=2%
TYP
45
120
CCN83Rev280303E
MAX
1.0
1.0
560
0.6
1.5
UNITS
V
V
V
A
A
mW
ºC
UNITS
µA
µA
V
V
pF
MHz
Continental Device India Limited
Data Sheet
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